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Comment: Sources are insufficient for notability. All sources appear to be primary, when we need typically 2 (ideally 3) secondary sources that are significantly about the subject (ex: review articles, monographs, books). Primary sources are fine for verification of facts but not for sourcing an entire article. I also suspect some AI use in article preparation, based on the formatting (please review WP:MOS and format accordingly). Also, the article just doesn't seem to be finished, as two entire sections, one of them with two subheadings, are empty. WeirdNAnnoyed (talk) 12:00, 17 February 2026 (UTC)
Wurtzite ferroelectrics are a new class of ferroelectric materials discovered in 2019.[1]. The first wurtzite ferroelectric compound identified was Sc-doped Aluminum Nitride.
Wurtzite ferroelectrics are very different from their perovskite counterparts : they have very high temperature stability [2] as well as no identified Curie Temperature, compatibility to CMOS platforms and very high remanent polarization [3]
History
editCompounds like AlN were considered for many years as polar materials where electrical polarization is unswitchable because of the high energetic barrier needed to switch between two states of opposiste polarization.
At the beginning of the 21th century, ScN was found to be able to host wurtzite or hexagonal structure. This led to further studies showing the stability of the wurtzite phase in ScAlN and ScGaN alloys.
Doping in nitrides compounds (ScGaN, ScInN, ScAlN etc.) was predicted to enhance piezoelectric response through flattening of the energetic barrier and experimentally verified latter.
An important work by Zhang et al., suggested ferroelectricity in ScGaN and ScAlN alloys where ferroelectric polarization is directly linked to a geometrical parameter called the "u parameter". Ferroelectricity was later confirmed in 2019 by S. Fichtner et al. This discovery opened a new field in ferroelectric materials.
Polarization switching
editMaterials
editApplications
editReferences
edit- ↑ Fichtner, Simon (2019). "AlScN: A III-V semiconductor based ferroelectric". Journal of Applied Physics. 125 (11) 114103. arXiv:1810.07968. Bibcode:2019JAP...125k4103F. doi:10.1063/1.5084945.
- ↑ Islam, Md. Redwanul (2021). "On the exceptional temperature stability of ferroelectric Al1-xScxN thin films". Applied Physics Letters. 118 (23) 232905. arXiv:2105.08331. doi:10.1063/5.0053649.
- ↑ Zhang, Yalong (2024). "New-Generation Ferroelectric AlScN Materials". Nano-Micro Letters. 16 (1) 227. Bibcode:2024NML....16..227Z. doi:10.1007/s40820-024-01441-1. PMC 11199478. PMID 38918252.
- ↑ Fichtner, Simon (2019). "AlScN: A III-V semiconductor based ferroelectric". Journal of Applied Physics. 125 (11) 114103. arXiv:1810.07968. Bibcode:2019JAP...125k4103F. doi:10.1063/1.5084945.
- ↑ Hayden, John (2021). "Ferroelectricity in boron-substituted aluminum nitride thin films". Phys. Rev. Mater. 5 (4) 044412. Bibcode:2021PhRvM...5d4412H. doi:10.1103/PhysRevMaterials.5.044412.
- ↑ Ferri, Kevin (2021). "Ferroelectrics everywhere: Ferroelectricity in magnesium substituted zinc oxide thin films". Journal of Applied Physics. 130 (4) 044101. doi:10.1063/5.0053755.
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